(2015)

 1.  Seon-Ho Jang, Yong-Ryun Jo,Young-Woong Lee, Sei-Min Kim, Bong-Joong Kim, Jae-Hyun Bae, Huei-Chun An, and Ja-Soon Jang // Electron. Mater. Lett. // "Formation Mechanism of Thermally Optimized Ga-Doped MgZnO Transparent Conducting Electrodes for GaN-Based Light-Emitting Diodes "

   (2014)

 7.  Kwang Wook Park, Chang Young Park, Sooraj Ravindran, Ja-Soon Jang, Yong-Ryun Jo, Bong-Joong Kim, Yong Tak Lee // Nanoscale Research Letters // "Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy"

 6.  S. Sukrittanon, Y. J. Kuang, A. Dobrovolsky, Won-Mo Kang, Ja-Soon Jang, Bong-Joong Kim, W. M. Chen, I. A. Buyanovam and C.W.Tu // Appl. Phys. Lett. // "Growth and characterization of dilute nitride GaNxP12x nanowires and GaNxP12x/GaNyP12y core/shell nanowires on Si (111) by gas source molecular beam epitaxy"

 5.  Bong-Joong Kim, J. Tersoff, S. Kodambaka, Ja-Soon Jang, E.A. Stach, and F.M. Ross // Nano letters // "Au Transport in Catalyst Coarsening and Si Nanowire Formation"

 4.  M. Siva Pratap Reddy, Jung-Hee Lee and Ja-Soon Jang // Electron. Mater. Lett. // "Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures"

 3.  M. Siva Pratap Reddy, Dong-Hyeok Son, Jung-Hee Lee and Ja-Soon Jang // Materials Chemistry and Physics // "Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode"

 2. M. Siva Pratap Reddy, Hee-Sung Kang, Jung-Hee Lee, V. Rajagopal Reddy, and Ja-Soon Jang // J. APPL. POLYM. SCI. // "Electrical Properties and the Role of Inhomogeneities at the Polyvinyl Alcohol/n-InP Schottky Barrier Interface"

 1. M. Siva Pratap Reddy, Bong-Joong Kim and Ja-Soon Jang // Opt. Express // "Dual detection of ultraviolet and visible lights using a DNA-CTMA/GaN photodiode with electrically different polarity"

   (2013)

 2. Jun-Hyuk Choi, Seon-Ho Jang, and Ja-Soon Jang // Electron. Mater. Lett. // "Electrical, Optical, and Structural Characteristics of Ohmic Contacts between p-GaN and ITO Deposited by DC- and RF-Magnetron Sputtering"

 1. Seon-Ho Jang and Ja-Soon Jang // Electron. Mater. Lett. // "Electrical characteristics and carrier transport mechanism for Ti/p-GaN Schottky diodes"

   (2012)

 3. Seon-Ho Jang and Ja-Soon Jang // Jpn. J. Appl. Phys.// "Carrier Transport Mechanism at the Interface between Metals and p-Type III-Nitrides Having Different Surface Electronic Structures"

 2. Tae-Chul Nam, Ja-Soon Jang, Tae-Yeon Seong // CAP // "Carriertransportmechanism of strainedAlGaN/GaNSchottkycontacts"

 1. Sei-Min Kim, Seon-Ho Jang, Ja-Soon Jang // Frontiers of Optoelectronics // "High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN"

   (2010)

 3. Sei-min Kim, Young-Boo Moon, Il-Kyu Park, and Ja-soon Jang // Phys. Stat. Sol. (c) //“Degradation mechanism of light-emitting diodes on patterned sapphire substrate.”

 2. J-S Jang and T-Y Seong // Phys. Stat. Solidi. (a) (in revision) // "Electrical characteristics of Cr/Pd Schottky contacts to strained AlGaN/GaN"

 1. S-H Jang, J-S Jang, // Electrochem Solid-State Lett. // "Schottky Barrier characteristics and Carrier transport mechanism of ohmic contact to strained p-type InGaN/GaN Superlittice"

   (2009)

 1. Hyo-Jin Ahn, Ja-Soon Jang, Yung-Eun Sung, Tae-Yoen Seong // Journal of Alloys and Compounds. 473(2009), L28-L32, "Optimum condition for the growth of Pt-CeO2 nanocomposite electrodes for thin-film fuel cells.“

   (2008)

 2. J-O Song, H-G Hong, J-W Jeon, J-I Sohn, J-S Jang and T-Y Seong // Electrochem. & Solid-state Lett. 11(2), H36-H38(2008) // "Possible ohmic Mechanisms of Ag / Indium Tin Oxide p-type contacts for High-Brightness GaN-based Light-Emitting diode."

 1. J-S Jang// Appl. Phys. Lett. 93, 081118 (2008) // "High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN superlattice."

   (2007)

 5. J-S Jang*, G. Saraf, H. Chen, and Y. Lu, // Nature Materials (in revision) // “Demonstrationof high efficient red-emission from nano-crystallized (Zn,Ga)-O:Eu-O in amorphous ZnO.”

 4. J-S Jang*, T-Y Seong, and S-R Jeon // Appl. Phys. Lett. 91, 092129 (2007) // “Formation mechanism of low-resistance and thermally stable Pd/Ni/Pd/Ru ohmic contacts to Mg-doped AlGaN.”

 3. S-M Kim, Y-M Yu, J-H Baek, S-R Jeon, H-J Ahn, and J-S Jang* // J.Electrochem. Soc. 154, H384 (2007) // “Plasma damage influence on the n-contact properties and device performance of ultraviolet InGaN/AlGaN light-emitting diodes.”

 2. J-S Jang* and T-Y Seong, and S-R Jeon // Electrochem. & Solid-State Lett. 10, H120 (2007) // “Electronic transport mechanism for Ti-based ohmic contacts to strained AlGaN/GaN heterostructure.”

 1. J-S Jang*, and T-Y Seong // J. Appl. Phys. 101, 013711 (2007) // “Low resistance and thermally stable ITO ohmic contacts on p-InGaN/p-GaN layer.”

   (2006)

 7. D-S Leem, T-W Kim, T-H Lee, J-S Jang, Y-W Ok, and T-Y Seong // Appl. Phys. Lett. 89, 262115  (2006) // "Formation mechanism of Cesium oxide doped Indium oxide/Ag ohmic contacts to p-type GaN."

 6. J-S Jang*, T-Y Seong, and S-R Jeon // J. Appl. Phys. 100, 046106 (2006) // “Electronic transport mechanism for nonalloyed Ti-based ohmic contacts to n-AlGaN.”

 5. J-S Jang,* D-H Kim, and T-Y Seong // IEEE Photon. Technol. Lett. 18(14), 1536 (2006) //"Low turn-on voltage and series resistance of polarization-induced InGaN-GaN LEDs using p-InGaN/p-GaN superlattice.”

 4. M-S Oh, S-J Park, J-S Jang and T-Y Seong, // J. Mater. Sci. 17, 831 (2006) //"Electrical properties of nonalloyed Ni/Au ohmic contacts to KrF excimer laser-irradiated p-type GaN.

 3. J-S Jang,* S-J Sohn, D-H Kim, and T-Y Seong // Semicon. Sci. & Technol. 21, L37 (2006) // “Formation of low-resistance transparent Ni/Au ohmic contacts to polarization field-induced p-InGaN/GaN superlattice.”

 2. J-S Jang*, D-H Kim, and T-Y Seong // J. Appl. Phys. 99, 073704 (2006) // “Schottky barrier characteristics of Pt contacts to n-type InGaN.”

 1. M-S Oh, J-S Jang, S-J Park, and T-Y Seong // Phys. Stat. Sol. (c), 3(6), 1717 (2006) // “Formation of low-resistance nonalloyed ohmic contacts to p-GaN by KrF laser irradiation.”

   (~2005)

 17. J-R Lee, S-I Na, J-H Jeong, S-N Lee, J-S Jang, S-H Lee, J-J Jung, J-O Song, T-Y Seong, and S-J Park, J. Electrochem. Soc. 152, G92 (2005), “Low-resistance and high reflective Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes.”

16. S-H Lee, H-K Son, S-J Kim, H-H Jung, J-S Jang, J-J Jung, S-H Lee, T-H Kim, and Y-M Yoo, Phys. Phys. Stat. Sol.(a) 201, 2726 (2004), “High brightness GaN-based light emitting diodes using ITO/n+-InGaN/InGaN/n+-GaN/p-GaN tunneling junction.”

15. J-S Jang,*S-J Park, and T-Y Seong, Phys. Stat. Sol. (a) 194, 576 (2002), “Effects of surface treatment on electrical properties of ohmic contacts to (In)GaN for high performance optical devices.”

14. J-S Jang,* C-W Lee,S-J Park, and T-Y Seong, andI. F. Ferguson, J. Electron. Mater. 31, 903 (2002), “Low resistance  and thermally stable ohmic contacts to p-type GaN.”

13. H-S Kim,R-M Park, J-S Jang,*S-J Park, and H-S Hwang, Electrochem. Solid-State Lett. 4, G104 (2001), “Effects of N2O plasma surface treatment on electrical and ohmic contact properties of n-type GaN.”

12. J-S Jang,* D-J Kim,S-J Park, and T-Y Seong, J. Electron. Mater. 30, 94 (2001), “Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-GaN.”

11. J-S Jang,*S-J Park, and T-Y Seong, J. Appl. Phys. 88, 5490 (2000), “Ultrahigh transparency of Ni/Au ohmic contacts to surface-treated p-type GaN.”

10. J-S Jang,* T-Y Seong, J. Appl. Phys. 88, 3064 (2000), “Mechanisms for the reduction of the Schottky barrier heights of high quality nonalloyed Pt contacts on surface-treated p-GaN.”

 9. J-S Jang,*S-J Park, and T-Y Seong, Phys. Stat. Sol.(a) 180, 103 (2000), “Low resistance and thermally stable Pt/Ru ohmic contacts to surface-treated p-GaN.”

 8. J-S Jang,*S-J Park, and T-Y Seong, MRS Internet J. Nitride Semicond. Res. 5S1, w10.4 (2000), “High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment.”

 7. J-S Jang,*S-J Park, and T-Y Seong, Appl. Phys. Lett. 76, 2898 (2000), “Metallization scheme for highly low-resistance, transparent, and thermally stable ohmic contacts to p-type GaN.”

 6. J-S Jang* and T-Y Seong, Appl. Phys. Lett. 76, 2743 (2000), “Electronic transport mechanisms of nonalloyed Pt ohmic contacts to p-type GaN.”

 5. H-K Kim, J-S Jang,S-J Park, and T-Y Seong, J. Electrochem. Soc. 147, 1573 (2000), “Electrical and structural properties of W ohmic contacts to n-InGaN.”

 4. J-S Jang,*S-J Park, and T-Y Seong, J. Vac. Sci. Techno.B 17, 2667 (1999), “Formation of low resistance Pt ohmic contacts to p-GaN using two-step surface treatment.”

 3. J-S Jang,*S-J Park, and T-Y Seong, J. Electrochem. Soc. 146, 3428 (1999), “Interfacial reaction of Ni/Pt/Au ohmic contacts to p-GaN.”

 2. J-S Jang,* I-S Chang, H-K Kim, T-Y Seong, S-H Lee, andS-J Park, Appl. Phys. Lett. 74, 70 (1999), “Low resistance Pt/Ni/Au ohmic contacts to p-type GaN.”

 1. J-S Jang,* K-H Park, H-G Jang, H-G Kim, and S-J Park, J. Vac. Sci. Technol.B 16, 3105 (1998), “Ohmic contacts to p-type GaN using Ni/Pt/Au metallization scheme.”